Document Type : Research Paper
Authors
Anbar University - College of Education - Department of Physics
Abstract
In this paper the effect engenders by fast neutrons and gamma
rays on the electrical properties of some silicon diodes was in vestigated. The
neutron generator (T-400) was used to induce fast neutrons with energy (En=14
MeV) and the standard source (60Co) was used to induce gamma ray with
energy range (1.33-1.17 MeV). The measurements of the samples included
studying the characteristics Current–Voltage (I-V characteristics) before and
after irradiation taking into account that these samples were exposed to
different successive periods of irradiation from the neutron source and to
different doses of gamma rays. The results indicate that there are some changes
in the properties of the samples that were exposed to fast neutrons, that is, the
current increases at low-levels fluency. And with the increase in the neutron
fluency the current decreases, this decrease continues with the increase in the
neutron fluency till it goes back to a level near to its original one. The results of
the samples, which were exposed to gamma rays, indicate a slight change in
their properties. The current decreases with increase in the doses and the
continuity of providing gamma doses leads to a nil current.
Main Subjects
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