Document Type : Research Paper

Authors

• Kadhim A.Al-Hamdani ¹
• Ghuson H.Mohamed ¹
• Enas S.Y. Al-Mizban ²

¹ University of Baghdad - College of Science

² University of Anbar - College of Medicine

Abstract

A polycrystalline CdS/CdTe heterojunction prepared by thermal evaporation technique at
substrate temperature of 373 K and heat treatment for annealing temperature 573 K for different duration
times of annealing (ta) 60 and 120 min. under vacuum of (10-5) mbar and different thicknesses of CdS
layer of about 1000Å, 1500Å and 2000Å. The X-ray diffraction (XRD) technique shows polycrystalline
structure and had a mixture of cubic and hexagonal structure.The recrystallization of films enhanced
thermally represented by increasing the grain size. The CdS/CdTe heterojunction with the higher thickness
of CdS layer shows better crystal structure

Keywords

• Thermal Treatment
• variation
• CdS
• Structural properties
• Heterojunction

Main Subjects

• Chemistry