Document Type : Research Paper
Author
University of Anbar - Collage of Science
Abstract
The AgInS2 thin films were prepared on a glass substrates with different substrate temperatures (623, 573,
523 and 473) K by chemical spray Pyrolysis . For annealing temperature 473 K , different time ( 2, 2.5 and 3) hours
have been applied .The structure test produced by used the x-ray techniques by (Diffraction and diffractometer Philips
200) system with copper target (Cu - Kα), wavelength (0.15406 nm), the average is (2000counts/sec), the voltage is
(40 KV) , the scanning average is (5 deg /min) and the angle range is (2θ =20o – 60o).The optical properties of the
AgInS2 films were determined from the absorbance (A) and the transmittance (T) data , using UV-Vis.
Spectrophotometer at wavelength (400 – 1000) nm at room temperature.The direct band gap of (1.87 – 2.46) eV has
been found that of the AgInS2 thin films according the substrate temperature , also , it is affected by annealing time
and becomes ( 1.82 – 2.15) eV . The optical constants (α , k , n ) are also changed as the substrate temperature and
annealing time change .The AgInS2 films regard as active selecting films in the range (400 – 665) nm , and can be used
as an absorber layers in solar cells and optoelectric devices.
Keywords
Main Subjects
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