Author
10.37652/juaps.2009.15466
Abstract
In this paper CdSe thin films have been prepared deposited on galas substrate by thermal
evaporation technique at thickness 250 nm with different depositions rate ( 0.2,0.4,0.6,0.8,1,1.2) nm/s
and substrate temperatures ( Ts) (300,373,423,473)K . Thermoelectric power were measured to this
films ,Seebak coefficient and activation energy were evaluated, the results shows that all films were
of n-type conductivity and activation energy increases with dispositions rate and substrate temperature
films prepared at 0.8 nm/s with 425 K and 1.2 nm/s with Ts (425 ,475 ) K , except that they were
of p-type conductivity .
Keywords
)
