Fabrication of Highly Sensitive NH3 Sensor Based on Mixed In2O3 – AgxO Nanostructural Thin Films deposited on porous silicon

Nayel, Hajar H.; AL-Jumaili, Hamid S.

doi:10.37652/juaps.2022.172118

Document Type : Research Paper

Authors

Department of Physics, College of Education for Pure Sciences, University Of Anbar, Ramadi, Iraq

https://doi.org/10.37652/juaps.2022.172118

Abstract

A highly sensitive NH3 gas sensor of mixed In2O3 – AgxO nanostructure thin films deposited on porous silicon were synthesized by chemical spray pyrolysis technique. The structure of the sensor thin films is analyzed by XRD, AFM and FE-SEM techniques. The nanostructure polycrystalline thin films with average grain size between (93.56 and 57.75) nm, from AFM results. The sensitivity of the synthesized gas sensors toward 400 ppm NH3 is obtained a high value in the low operating temperature, which ranged between (77.57%-98.66%) with low response and recovery times, ranged between (11.9-15.19) s and (8.6-25.22) s respectively. These high sensor properties are due to the porous silicon substrate.

Keywords

Main Subjects

Physics

References

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Journal of University of Anbar for Pure Science

Fabrication of Highly Sensitive NH3 Sensor Based on Mixed In2O3 – AgxO Nanostructural Thin Films deposited on porous silicon

References

References

Volume 13, Issue 2
August 2019
Page 40-47

Fabrication of Highly Sensitive NH3 Sensor Based on Mixed In2O3 – AgxO Nanostructural Thin Films deposited on porous silicon

References

References

Volume 13, Issue 2August 2019Page 40-47

Volume 13, Issue 2
August 2019
Page 40-47