Document Type : Research Paper

Authors

1 Tikrit University - College of Education

2 University of Technology - Department of Applied Sciences

3 Tikrit University - College of Science

Abstract

In this work CdO/Si heterojunction detector were fabricated by depositing CdO thin film on p-type single crystal silicon wafers by chemical bath deposition technique(CBD) . The effect of cadmium ion concentration on the structural properties of deposited film and optoelectronic characteristics of fabricated detector has been considered in this work . From the x-ray diffraction result, it is shown that the CdO film has a single crystalline in cubic structure with preferential orientation along the (311) crystal plane. The -voltage characteristics under dark result, it is shown that ideality factor of heterojunction has higher value(n˃1).From current-voltage characteristics under illuminations result, it is shown that photocurrent increase with increasing cadmium ion concentration in solution. The capacitance–voltage characteristic shows a typical abrupt heterojunction. The optoelectronic characteristics shows the CdO/Si detector has good spectral responsivity in visible and NIR with higher peak responsivity at 900 nm were found 0.38 A/W.

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Main Subjects

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