Y. K. Jabur; G. A. Naeem; S. K. Fehan
Abstract
In this paper the effect engenders by fast neutrons and gamma rays on the electrical properties of some silicon diodes was in vestigated. The neutron generator (T-400) was used to induce ...
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In this paper the effect engenders by fast neutrons and gamma rays on the electrical properties of some silicon diodes was in vestigated. The neutron generator (T-400) was used to induce fast neutrons with energy (En=14 MeV) and the standard source (60Co) was used to induce gamma ray with energy range (1.33-1.17 MeV). The measurements of the samples included studying the characteristics Current–Voltage (I-V characteristics) before and after irradiation taking into account that these samples were exposed to different successive periods of irradiation from the neutron source and to different doses of gamma rays. The results indicate that there are some changes in the properties of the samples that were exposed to fast neutrons, that is, the current increases at low-levels fluency. And with the increase in the neutron fluency the current decreases, this decrease continues with the increase in the neutron fluency till it goes back to a level near to its original one. The results of the samples, which were exposed to gamma rays, indicate a slight change in their properties. The current decreases with increase in the doses and the continuity of providing gamma doses leads to a nil current.
